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Initial stages of nanocrystal growth of compound semiconductors on Si substrates
被引:0
|
作者
:
Oshima, M.
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Interdisciplinary Research Labs., Musashino-shi, Tokyo 180, Japan
NTT Interdisciplinary Research Labs., Musashino-shi, Tokyo 180, Japan
Oshima, M.
[
1
]
Watanabe, Y.
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Interdisciplinary Research Labs., Musashino-shi, Tokyo 180, Japan
NTT Interdisciplinary Research Labs., Musashino-shi, Tokyo 180, Japan
Watanabe, Y.
[
1
]
Heun, S.
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Interdisciplinary Research Labs., Musashino-shi, Tokyo 180, Japan
NTT Interdisciplinary Research Labs., Musashino-shi, Tokyo 180, Japan
Heun, S.
[
1
]
Sugiyama, M.
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Interdisciplinary Research Labs., Musashino-shi, Tokyo 180, Japan
NTT Interdisciplinary Research Labs., Musashino-shi, Tokyo 180, Japan
Sugiyama, M.
[
1
]
Kiyokura, T.
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Interdisciplinary Research Labs., Musashino-shi, Tokyo 180, Japan
NTT Interdisciplinary Research Labs., Musashino-shi, Tokyo 180, Japan
Kiyokura, T.
[
1
]
机构
:
[1]
NTT Interdisciplinary Research Labs., Musashino-shi, Tokyo 180, Japan
来源
:
Journal of Electron Spectroscopy and Related Phenomena
|
1996年
/ 80卷
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页码:129 / 132
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