Electrodeposition of Si from organic solvents and studies related to initial stages of Si growth

被引：79

作者：

Munisamy, Thiruvengadam ^{[1
]}

Bard, Allen J. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Chem & Biochem, Ctr Electrochem, Austin, TX 78712 USA

来源：

ELECTROCHIMICA ACTA | 2010年 / 55卷 / 11期

基金：

美国国家科学基金会;

关键词：

Si electrodeposition; Organic solvents; Cyclic voltammetry; Chronoamperometry; Thin films; NONAQUEOUS SOLVENT; SILICON; FILMS;

D O I：

10.1016/j.electacta.2010.01.097

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Electrodeposition of Si on substrates such as Ni, Ag and GC from acetonitrile and tetrahydrofuran containing SiCl4 and SiHCl3 as precursors is reported. The deposits readily oxidize on exposure to air but XPS analysis of a deposit with minimum contact with air confirms that elemental Si (2p, 99.5 eV) is electrodeposited. The deposits contained C, O, N and Cl impurities; annealing under argon improved the quality of the deposits. Studies related to initial stages of Si growth using cyclic voltammetry and chronoamperometry suggest that growth occurs via four stages (1) nucleation and localized growth, (2) growth in between islands, (3) growth inhibition and (4) slow growth stage and the growth is inhibited after a layer (similar to 2 nm) of Si is electrodeposited on the substrate. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：3797 / 3803

页数：7

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