Magnetooptic waveguide with SiO2 cladding layer integrated on InP substrate by wafer direct bonding

被引:0
|
作者
Tokyo Inst of Technology, Tokyo, Japan [1 ]
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Magnetooptic waveguide with SiO2 cladding layer integrated on InP substrate by wafer direct bonding
    Yokoi, H
    Mizumoto, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12A): : 7230 - 7232
  • [2] Researching the silicon direct wafer bonding with interfacial SiO2 layer
    王小青
    俞育德
    宁瑾
    Journal of Semiconductors, 2016, (05) : 125 - 128
  • [3] Study on the interfacial SiO2 layer of silicon wafer direct bonding
    Jin, H
    Xin, W
    Xing, BC
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 765 - 767
  • [4] Researching the silicon direct wafer bonding with interfacial SiO2 layer
    Wang Xiaoqing
    Yu Yude
    Ning Jin
    JOURNAL OF SEMICONDUCTORS, 2016, 37 (05)
  • [5] Direct bonding between InP substrate and magnetooptic waveguides
    Tokyo Inst of Technology, Tokyo, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 7 (4138-4140):
  • [6] Direct bonding between InP substrate and magnetooptic waveguides
    Yokoi, H
    Mizumoto, T
    Maru, K
    Fuke, N
    Naito, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07): : 4138 - 4140
  • [7] Room Temperature SiO2 wafer bonding by adhesion layer method
    Kondou, Ryuichi
    Suga, Adatomo
    2011 IEEE 61ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2011, : 2165 - 2170
  • [8] InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer
    Fujii, Takuro
    Sato, Tomonari
    Takeda, Koji
    Hasebe, Koichi
    Kakitsuka, Takaaki
    Matsuo, Shinji
    26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2014,
  • [9] Results on Aligned SiO2/SiO2 Direct Wafer-to-Wafer Low Temperature Bonding for 3D Integration
    Garnier, A.
    Angermayer, M.
    Di Cioccio, L.
    Gueguen, P.
    Wagenleitner, T.
    2009 IEEE INTERNATIONAL SOI CONFERENCE, 2009, : 101 - +
  • [10] Study on Interfacial SiO2 Layer of Silicon Direct Bonding
    He Jin
    半导体学报, 1999, (04) : 3 - 5