Study on the interfacial SiO2 layer of silicon wafer direct bonding

被引：0
|
作者：
Jin, H
Xin, W
Xing, BC
机构：
来源：
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICSICT.1998.786124
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The interfacial SiO2 Layer of silicon wafer direct bonding has been studied in this paper. By means of AES and SEM, it ha been found that interfacial SiO2 disintegrates into sphere-shaped-like islands with average radius much larger than the thickness of the native oxide layer, and is of amorphous material, SiO1.5 experimentally. The theoretical analysis shows that SiO2 spontaneously disintegrates into islands because of to decrease the inter-face free energy as muck as possible.
引用
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页码：765 / 767
页数：3
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