Magnetooptic waveguide with SiO2 cladding layer integrated on InP substrate by wafer direct bonding

被引：0
|
作者：
Tokyo Inst of Technology, Tokyo, Japan [1 ]
机构：
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 12 A卷 / 7230-7232期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Growth of SiO2 on InP substrate by liquid phase deposition
    Lei, Po Hsun
    Yang, Chyi Da
    APPLIED SURFACE SCIENCE, 2010, 256 (12) : 3757 - 3760
  • [22] Room temperature wafer bonding through conversion of polysilazane into SiO2
    Takeuchi, Kai
    Suga, Tadatomo
    Higurashi, Eiji
    SCIENTIFIC REPORTS, 2024, 14 (01):
  • [23] Investigation of Plasma Gases for Polysilazane Conversion into SiO2 for Wafer Bonding
    Nemoto, Daiki
    Takeuchi, Kai
    Higurashi, Eiji
    2024 International Conference on Electronics Packaging, ICEP 2024, 2024, : 289 - 290
  • [24] Impact of SiO2 on Al-Al thermocompression wafer bonding
    Malik, Nishant
    Schjolberg-Henriksen, Kari
    Poppe, Erik U.
    Taklo, Maaike M. V.
    Finstad, Terje G.
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2015, 25 (03)
  • [25] Low temperature lasing characteristics of GaInAsP double-hetero laser integrated on InP/Si substrate using direct wafer bonding
    Nishiyama, Tetsuo
    Matsumoto, Keiichi
    Kishikawa, Junya
    Sukigara, Toshiki
    Onuki, Yuya
    Kamada, Naoki
    Kanke, Tomokazu
    Shimomura, Kazuhiko
    2016 21ST OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) HELD JOINTLY WITH 2016 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS), 2016,
  • [26] SiO2-SiO2 die-to-wafer direct bonding interface weakening
    Tabata, Toshiyuki
    Sanchez, Loic
    Larrey, Vincent
    Fournel, Frank
    Moriceau, Hubert
    MICROELECTRONICS RELIABILITY, 2020, 107
  • [27] Low temperature InP layer transfer onto Si by helium implantation and direct wafer bonding
    Singh, R.
    Radu, I.
    Scholz, R.
    Himcinschi, C.
    Goesele, U.
    Christiansen, S. H.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (09) : 1311 - 1314
  • [28] Heterogeneously Integrated Lasers using Epitaxially Grown III-V Active Layer on Directly Bonded InP/SiO2/Si Substrate
    Fujii, Takuro
    Takeda, Koji
    Kanno, Erina
    Hasebe, Koichi
    Nishi, Hidetaka
    Yamamoto, Tsuyoshi
    Kakitsuka, Takaaki
    Matsuo, Shinji
    2016 IEEE PHOTONICS CONFERENCE (IPC), 2016, : 540 - 541
  • [29] SiO2 Waveguide Resonator Used in an Integrated Optical Gyroscope
    Yu Huai-Yong
    Zhang Chun-Xi
    Feng Li-Shuang
    Zhou Zhen
    Hong Ling-Fei
    CHINESE PHYSICS LETTERS, 2009, 26 (05)
  • [30] Catalyst patterned growth of interconnecting graphene layer on SiO2/Si substrate for integrated devices
    Lee, Yun-Hi
    Lee, Jong-Hee
    APPLIED PHYSICS LETTERS, 2009, 95 (14)
12345