Characterizing nanoparticles by scanning tunneling microscopy and scanning tunneling spectroscopy

被引:0
|
作者
Schmidt-Ott, A. [1 ]
Marsen, B. [2 ]
Sattler, K. [2 ]
机构
[1] University of Duisburg, Inst. of Combustion and Gas Dynamics, D-47048 Duisburg, Germany
[2] University of Hawaii at Manoa, Dept. of Physics and Astronomy, 2505 Correa Road, Honolulu, HI 96822, United States
关键词
D O I
10.1016/S0021-8502(97)85363-3
中图分类号
学科分类号
摘要
引用
下载
收藏
相关论文
共 50 条
  • [41] SCANNING TUNNELING MICROSCOPY
    GRIFFITH, JE
    KOCHANSKI, GP
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1990, 20 : 219 - 244
  • [42] SCANNING TUNNELING MICROSCOPY
    EDELMAN, VS
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1989, 32 (05) : 993 - 1022
  • [43] Scanning Tunneling Spectroscopy
    Zandvliet, Harold J. W.
    van Houselt, Arie
    ANNUAL REVIEW OF ANALYTICAL CHEMISTRY, 2009, 2 : 37 - 55
  • [44] SCANNING TUNNELING SPECTROSCOPY
    FEENSTRA, RM
    SURFACE SCIENCE, 1994, 299 (1-3) : 965 - 979
  • [45] Characterization of TiO2 nanocrystalline thin film by scanning tunneling microscopy and scanning tunneling spectroscopy
    Lin, Y
    Lin, RF
    Wang, WB
    Xiao, XR
    APPLIED SURFACE SCIENCE, 1999, 143 (1-4) : 169 - 173
  • [46] The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
    Dept. of Elec. and Electron. Eng., University of Wales Swansea, Singleton Park, Swansea SA2 8PP, United Kingdom
    J Appl Phys, 10 (5636-5641):
  • [47] The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
    Dunstan, PR
    Wilks, SP
    Teng, KS
    Pritchard, MA
    Williams, RH
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) : 5636 - 5641
  • [48] Scanning tunneling microscopy/scanning tunneling spectroscopy observation of III-V compound semiconductor nanostructures
    Noh, Joo-Hyong
    Asahi, Hajime
    Kim, Seong-Jin
    Takemoto, Minori
    Gonda, Shun-ichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (6 B): : 3743 - 3748
  • [49] Scanning tunneling microscopy scanning tunneling spectroscopy observation of III-V compound semiconductor nanostructures
    Noh, JH
    Asahi, H
    Kim, SJ
    Takemoto, M
    Gonda, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (6B): : 3743 - 3748
  • [50] Low temperature scanning tunneling microscopy and scanning tunneling spectroscopy study at the α-Sn/Ge(111) surface
    Ronci, F.
    Colonna, S.
    Thorpe, S.D.
    Cricenti, A.
    Le Lay, G.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (3 B): : 2180 - 2183