共 47 条
- [22] PATTERN PROFILE CONTROL IN MAGNETRON REACTIVE ION ETCHING OF POLY-SI JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05): : 2192 - 2196
- [23] Improved shallow trench isolation and gate process control using scatterometry based metrology Metrology, Inspection, and Process Control for Microlithography XIX, Pts 1-3, 2005, 5752 : 1180 - 1191
- [24] Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (01):
- [25] Shallow trench isolation top corner rounding using Si soft etching following diluted hydrofluorine solution JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (11A): : 7701 - 7704
- [26] Production control of shallow trench isolation (STI) at the 130nm node using spectroscopic ellipsometry based profile metrology METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 : 798 - 806
- [27] Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process Microsystem Technologies, 2010, 16 : 863 - 870
- [28] Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2010, 16 (05): : 863 - 870