Deep-submicron trench profile control using a magnetron enhanced reactive ion etching system for shallow trench isolation

被引:0
|
作者
Yeon, Chung-Kyu [1 ]
You, Hyuk-Joon [1 ]
机构
[1] ULSI Laboratory, LG Semicon Co., Ltd., 1, Hyangjeong-dong, Cheongju-si 361-480, Korea, Republic of
来源
| 1998年 / AVS Science and Technology Society卷 / 16期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 47 条
  • [21] THE BLACK SILICON METHOD - A UNIVERSAL METHOD FOR DETERMINING THE PARAMETER SETTING OF A FLUORINE-BASED REACTIVE ION ETCHER IN DEEP SILICON TRENCH ETCHING WITH PROFILE CONTROL
    JANSEN, H
    DEBOER, M
    LEGTENBERG, R
    ELWENSPOEK, M
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1995, 5 (02) : 115 - 120
  • [22] PATTERN PROFILE CONTROL IN MAGNETRON REACTIVE ION ETCHING OF POLY-SI
    KIMIZUKA, M
    WATANABE, Y
    OZAKI, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05): : 2192 - 2196
  • [23] Improved shallow trench isolation and gate process control using scatterometry based metrology
    Rudolph, P
    Bradford, SM
    Metrology, Inspection, and Process Control for Microlithography XIX, Pts 1-3, 2005, 5752 : 1180 - 1191
  • [24] Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching
    Cybart, Shane A.
    Roediger, Peter
    Ulin-Avila, Erick
    Wu, Stephen M.
    Wong, Travis J.
    Dynes, Robert C.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (01):
  • [25] Shallow trench isolation top corner rounding using Si soft etching following diluted hydrofluorine solution
    Mun, SY
    Shin, KC
    Yoon, KC
    Kwak, JS
    Ryu, HH
    Jeong, YH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (11A): : 7701 - 7704
  • [26] Production control of shallow trench isolation (STI) at the 130nm node using spectroscopic ellipsometry based profile metrology
    Peters, RM
    Chiao, RH
    Eckert, T
    Labra, R
    Nappa, D
    Tang, S
    Washington, J
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 : 798 - 806
  • [27] Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process
    Ü. Sökmen
    A. Stranz
    S. Fündling
    S. Merzsch
    R. Neumann
    H.-H. Wehmann
    E. Peiner
    A. Waag
    Microsystem Technologies, 2010, 16 : 863 - 870
  • [28] Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process
    Soekmen, Ue
    Stranz, A.
    Fuendling, S.
    Merzsch, S.
    Neumann, R.
    Wehmann, H. -H.
    Peiner, E.
    Waag, A.
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2010, 16 (05): : 863 - 870
  • [29] Luminescence properties of submicron features fabricated by using magnetron reactive ion etching with different sample biases
    Freiler, M
    McLane, GF
    Kim, S
    Levy, M
    Scarmozzino, R
    Herman, IP
    Osgood, RM
    APPLIED PHYSICS LETTERS, 1995, 67 (26) : 3883 - 3885
  • [30] Study of profile improvement during etching step for nano-scale shallow trench isolation (STI) gap-fill process
    Kim, H. T.
    Kim, D. Y.
    Lee, N. -E.
    You, J. H.
    Han, J. H.
    Shon, J. W.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 : S193 - S197