NO2 gas-sensing properties of Ga-doped ZnO thin film

被引：0

作者：

Matsushima, Shigenori ^{[1
]}

Ikeda, Daisuke ^{[1
]}

Kobayashi, Kenkichiro ^{[1
]}

Okada, Genji ^{[1
]}

机构：

[1] Ehime Univ, Matsuyama, Japan

来源：

Sensors and Actuators, B: Chemical | 1993年 / B14卷 / 1 -3 pt 2期

关键词：

Doping (additives) - Gallium - Nitrogen oxides - Oxides - Semiconducting zinc compounds - Sensors - Zinc oxide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this work, we prepare ZnO films on sapphire and quartz substrates, and compare the NO2 sensitivity of the almost single-crystalline ZnO film on the sapphire to that of the Polycrystalline ZnO film on quartz. In addition, the influence of Ga contents in ZnO on the NO2 sensitivity is examined. From these results, we propose the NO2-sensing mechanism of Ga-doped ZnO films.

引用

页码：621 / 622

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