Ga-doped ZnO thin film surface characterization by wavelet and fractal analysis

被引：21
|
作者：
Jing, Chenlei [1 ]
Tang, Wu [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2016年 / 364卷
关键词：
GZO; Atomic force microscopy; Surface roughness; Wavelet; Fractal; ATOMIC-FORCE MICROSCOPY; ROUGHNESS; IMAGES;
D O I：
10.1016/j.apsusc.2015.12.234
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The change in roughness of various thicknesses Ga-doped ZnO (GZO) thin films deposited by magnetron reactive sputtering on glass substrates at room temperature was measured by atomic force microscopy (AFM). Multi-resolution signal decomposition based on wavelet transform and fractal geometry was applied to process surface profiles, to evaluate the roughness trend of relevant frequency resolution. The results give a six-level decomposition and the results change with deposited time and surface morphology. Also, it is found that fractal dimension is closely connected to the underside diameter (grain size) and the distance between adjacent grains that affect the change rate of surface and the increase of the defects such as abrupt changes lead to a larger value of fractal dimension. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：843 / 849
页数：7
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