共 50 条
- [21] PIEZORESISTANCE OF UNIAXIALLY DEFORMED N-TYPE GALLIUM-PHOSPHIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (01): : 110 - 112
- [22] COMMUTATION EFFECT IN UNIAXIALLY DEFORMED N-TYPE SILICON AND N-TYPE GERMANIUM .3. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (02): : 139 - 142
- [23] CHARACTERISTIC FEATURES OF MAGNETORESISTANCE OF UNIAXIALLY DEFORMED N-TYPE GE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (08): : 1065 - 1066
- [25] Thermoelectric characteristics of uniaxially deformed n-Si in the temperature range 85-355K PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2016, 253 (10): : 1929 - 1936
- [26] CARRIER-DENSITY DEPENDENCE OF THE PHENOMENOLOGICAL RELAXATION TIME OF THE ELECTRON ENERGY IN n-TYPE Si. Soviet physics. Semiconductors, 1980, 14 (03): : 321 - 323
- [27] NERNST-ETTINGSHAUSEN TENSOR OF UNIAXIALLY DEFORMED N-TYPE SILICON AND N-TYPE GERMANIUM .2. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (10): : 1091 - 1093
- [29] INFLUENCE OF ELASTIC DEFORMATION ON THERMOELECTRIC POWER OF N-TYPE GE IN DRAG EFFECT REGION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (03): : 340 - +
- [30] CALCULATION OF ANISOTROPY PARAMETER FOR N-TYPE SI SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (11): : 2785 - &