Localization of excitons in pairs of natural dots induced by stacking faults in ZnSe quantum wells

被引：0
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作者：
Lüerssen, D. [1 ]
Bleher, R. [1 ]
Kalt, H. [1 ]
Richter, H. [1 ]
Schimmel, Th. [1 ]
Rosenauer, A. [2 ]
Litvinov, D. [2 ]
Kamilli, A. [2 ]
Gerthsen, D. [2 ]
Johst, B. [3 ]
Ohkawa, K. [3 ]
Hommel, D. [3 ]
机构：
[1] Institut für Angewandte Physik, Universität Karlsruhe, D-76128 Karlsruhe, Germany
[2] Lab. für Elektronenmikroskopie, Universität Karlsruhe, D-76128 Karlsruhe, Germany
[3] Inst. für Festkörperphysik, Universität Bremen, D-28334 Bremen, Germany
来源：
| 2000年 / Wiley-VCH Verlag Berlin GmbH, Weinheim, Germany卷 / 178期
关键词：
Atomic force microscopy - Excitons - Photoluminescence - Semiconducting selenium compounds - Semiconducting zinc compounds - Semiconductor device structures - Semiconductor quantum dots - Stacking faults - Transmission electron microscopy;
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摘要：
Pairs of bright spots aligned parallel to the cleaved sample edges are observed in micro-photoluminescence intensity maps of ZnSe/ZnMgSSe quantum-well structures. Structural characterization by atomic-force microscopy, plan-view and cross-section transmission electron microscopy reveal that the enhanced radiative recombination is induced by pairs of stacking faults intersecting the quantum wells. In the case of Frank-type stacking faults the wells are enlarged by up to 12 bilayers leading to an efficient exciton localization. This localization is much shallower in the case of Shockley-type stacking-fault pairs.
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