Type-II ZnTe/ZnSe quantum dots and quantum wells

被引：5
|
作者：
Najjar, Rita [1 ]
Andre, Regis [1 ]
Besombes, Lucien [1 ]
Bougerol, Catherine [1 ]
Tatarenko, Serge [1 ]
Mariette, Henri [1 ]
机构：
[1] CEA, CNRS, Grp Nanophys & Semicond, Inst NEEL, F-38042 Grenoble 9, France
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2009年 / 46卷 / 1-2期
关键词：
II-VI semiconductors; Epitaxial growth; Type-II heterostructures; Photoluminescence;
D O I：
10.1016/j.spmi.2009.02.006
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
ZnTe/ZnSe type-II heterostructures interfaces were investigated versus growth conditions. A well controlled Se/Zn flux ratio allows us to control the structures type: quantum dots with excitonic recombination of around 5 ns photoluminescence decay time or a quantum well with spatially indirect recombination with a much longer decay close to 100 ns. Quantum well luminescence presents a blueshift with increasing excitation power and a non exponential decay, attributed to the 2D separated electron and hole system. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：253 / 257
页数：5
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