Photoluminescence of 3C-SiC epilayers grown on lattice-matched substrates

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Kyoto Univ, Kyoto, Japan [1 ]
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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 10卷 / 6405-6410期
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Band structure - Crystal defects - Crystal impurities - Crystal lattices - Epitaxial growth - Excitons - Nitrogen - Optical materials - Photoluminescence - Spectrum analysis - Substrates;
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摘要：
The photoluminescence (PL) spectra of 3C-SiC epilayers grown on 15R-SiC and on 3C-SiC were measured. The PL spectra show strong exciton-related peaks and weak impurity-related peaks. The epilayers are of high quality and have a low density of impurities. Peaks due to excitons bound to neutral nitrogen showed very little shift induced by strain. Peaks considered to be due to free exciton recombination were observed and analyzed. Defect-related bands, usually observed for 3C-SiC grown on Si, were not observed. Although weak defect-related peaks were still observed, the epilayers have a lower density of defects than those on Si.
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