Anisotropy of etching in low pressure plasma

被引：0
|
作者：
Abraitis, V. [1 ]
Galdikas, A. [1 ]
Pranevicius, L. [1 ]
Vosylius, J. [1 ]
机构：
[1] Kaunas Univ of Technology, Kaunas, Lithuania
来源：
Electron Technology (Warsaw) | 1993年 / 26卷 / 01期
关键词：
Etched groove profiles - Etching through a mask - Ion beam activation - Plasmochemical etching;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：65 / 81
相关论文
共 50 条
  • [1] Numerical study of the etch anisotropy in low-pressure, high-density plasma etching
    Tuda, M
    Nishikawa, K
    Ono, K
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) : 960 - 967
  • [2] Low pressure plasma etching of silicon carbide
    Kim, B
    Kim, S
    Lee, BT
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (04): : 793 - 797
  • [3] Low pressure plasma etching of silicon carbide
    B. Kim
    S. Kim
    B.T. Lee
    Applied Physics A, 2005, 81 : 793 - 797
  • [4] Low-pressure plasma sources for etching and deposition
    Cooke, MJ
    Hassall, G
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2002, 11 (3A): : A74 - A79
  • [5] ANISOTROPY OF THE CHEMICAL ETCHING OF SILICON IN A PLASMA
    KIREEV, VY
    VRUBLEVSKII, EM
    HIGH ENERGY CHEMISTRY, 1984, 18 (04) : 285 - 288
  • [6] LOW-PRESSURE PLASMA-ETCHING WITH MAGNETIC CONFINEMENT
    MANTEI, TD
    WICKER, TE
    SOLID STATE TECHNOLOGY, 1985, 28 (04) : 263 - 265
  • [7] Low Pressure Plasma Voltage Process for Transformer Coupling Plasma Dry Etching
    Lee, Chi-Yuan
    Peng, Huan-Chih
    Lee, Shuo-Jen
    Chiou, Chuan-Sheng
    Lee, Wei-Pin
    Tsai, Chao-Hsuan
    INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2015, 10 (06): : 4732 - 4741
  • [8] ANISOTROPY OF HIGH-VACUUM LOW-ENERGY PLASMA-ETCHING OF SILICON
    YAFAROV, RK
    MEVLYUT, ST
    TERENTEV, SA
    ZHURNAL TEKHNICHESKOI FIZIKI, 1993, 63 (10): : 175 - 181
  • [9] VACUUM-SYSTEMS FOR PLASMA ETCHING, PLASMA DEPOSITION, AND LOW-PRESSURE CVD
    BARON, M
    ZELEZ, J
    SOLID STATE TECHNOLOGY, 1978, 21 (12) : 61 - &
  • [10] LOW-PRESSURE ETCHING OF GAAS WITH MULTIPOLAR PLASMA-CONFINEMENT
    MANTEI, TD
    JBARA, JJ
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) : 4885 - 4888
12345