ANISOTROPY OF HIGH-VACUUM LOW-ENERGY PLASMA-ETCHING OF SILICON

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作者：
YAFAROV, RK
MEVLYUT, ST
TERENTEV, SA
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ZHURNAL TEKHNICHESKOI FIZIKI | 1993年 / 63卷 / 10期
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O59 [应用物理学];
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页码：175 / 181
页数：7
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