Anisotropy of etching in low pressure plasma

被引：0
|
作者：
Abraitis, V. [1 ]
Galdikas, A. [1 ]
Pranevicius, L. [1 ]
Vosylius, J. [1 ]
机构：
[1] Kaunas Univ of Technology, Kaunas, Lithuania
来源：
Electron Technology (Warsaw) | 1993年 / 26卷 / 01期
关键词：
Etched groove profiles - Etching through a mask - Ion beam activation - Plasmochemical etching;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：65 / 81
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