GROWTH AND CHARACTERIZATION OF GaAs LAYERS GROWN ON Ge/Si SUBSTRATES BY METALORGANIC CHEMICAL VAPOR DEPOSITION.

被引：0
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作者：
Fukuda, Yukio [1 ]
Kadota, Yoshiaki [1 ]
Ohmachi, Yoshiro [1 ]
机构：
[1] NTT, Applied Electronics Lab,, Musashino, Jpn, NTT, Applied Electronics Lab, Musashino, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1988年 / 27卷 / 04期
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摘要：
25
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页码：485 / 488
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