Electrical characterization of InGaP/GaAs heterointerfaccs grown by metalorganic chemical vapor deposition

被引：1
|
作者：
Nittono, T
Fukai, YK
Hyuga, F
Maeda, N
机构：
[1] NTT Corp, Syst Elect Labs, Atsugi, Kanagawa 24301, Japan
[2] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 24301, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 11A期
关键词：
indium gallium phosphide; gallium arsenide; heterointerface; crystal defect; unintentional carrier;
D O I：
10.1143/JJAP.37.L1288
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical properties of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition have been studied using capacitance-voltage and Hall-effect measurements. It is found that n-type carriers at concentrations near 1 x 10(12) cm(-2) accumulate unintentionally at the heterointerface. it is also found that the accumulated-carrier concentration does not vary in the temperature range of 4 to 296 K. These results indicate that a donor-type defect exists in the InGaP side of die heterointerface and that its energy level is higher than that of the lowest conduction band of GaAs.
引用
收藏
页码：L1288 / L1289
页数：2
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