SURFACE THERMO-emf OF HOT ELECTRONS IN n-TYPE Si.

被引：0

作者：

Kal'venas, S.P.

Yushkevichene, M.M.

Versotskas, A.P.

机构：

来源：

Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1975年 / 9卷 / 09期

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D O I：

暂无

中图分类号：

TM2 [电工材料]; TN [电子技术、通信技术];

学科分类号：

0805 ; 080502 ; 080801 ; 0809 ;

摘要：

A study was made of the surface thermo-emf of hot electrons in n-type Si subjected to strong electric fields at room temperature. This thermo-emf was associated with the change in the depth and shape of the surface potential well containing hot electrons. The dependence of the thermo-emf due to hot electrons in n-type Si on the heating electric field was described satisfactorily by a model based on the concept of an effective electron temperature.

引用

页码：1095 / 1098

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