SURFACE THERMO-emf OF HOT ELECTRONS IN n-TYPE Si.

被引：0
|
作者：
Kal'venas, S.P.
Yushkevichene, M.M.
Versotskas, A.P.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1975年 / 9卷 / 09期
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中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
A study was made of the surface thermo-emf of hot electrons in n-type Si subjected to strong electric fields at room temperature. This thermo-emf was associated with the change in the depth and shape of the surface potential well containing hot electrons. The dependence of the thermo-emf due to hot electrons in n-type Si on the heating electric field was described satisfactorily by a model based on the concept of an effective electron temperature.
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页码：1095 / 1098
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