Selected Processes in Microwave Semiconductor GaAs Device Technology.

被引：0
|
作者：
Koscielniak, Waclaw [1 ]
Lasisz, Stanislaw [1 ]
Skrabka, Tomasz [1 ]
机构：
[1] Politechniki Wroclawskiej, Wroclaw, Pol, Politechniki Wroclawskiej, Wroclaw, Pol
来源：
Elektronika Warszawa | 1985年 / 26卷 / 03期
关键词：
SEMICONDUCTING GALLIUM ARSENIDE - Applications - SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER - TRANSISTORS; FIELD EFFECT;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The processes appearing in microwave GaAs device technology are presented. Technology of both Schottky diodes and a Schottky gate field effect transistor has been taken into consideration.
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页码：17 / 19
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