Selected Processes in Microwave Semiconductor GaAs Device Technology.

被引：0

作者：

Koscielniak, Waclaw ^{[1
]}

Lasisz, Stanislaw ^{[1
]}

Skrabka, Tomasz ^{[1
]}

机构：

[1] Politechniki Wroclawskiej, Wroclaw, Pol, Politechniki Wroclawskiej, Wroclaw, Pol

来源：

Elektronika Warszawa | 1985年 / 26卷 / 03期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - Applications - SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER - TRANSISTORS; FIELD EFFECT;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The processes appearing in microwave GaAs device technology are presented. Technology of both Schottky diodes and a Schottky gate field effect transistor has been taken into consideration.

引用

页码：17 / 19

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