Dissolution inhibitors for 193-nm chemically amplified resists

被引：0
|
作者：
Toshiba Corp, Kawasaki, Japan [1 ]
机构：
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 12 B卷 / 7625-7631期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
15
引用
收藏
相关论文
共 50 条
  • [21] Design Considerations for 193-nm Positive Resists
    Allen, R. D.
    Wan, I.-Y.
    Wallraff, G. M.
    DiPietro, R. A.
    ACS Symposium Series, 1995, (614):
  • [22] DESIGN CONSIDERATIONS FOR 193-NM POSITIVE RESISTS
    ALLEN, RD
    WALLRAFF, GM
    HOFER, DC
    KUNZ, RR
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1995, 209 : 62 - PMSE
  • [23] Novel single-layer chemically amplified resist for 193-nm lithography
    Choi, SJ
    Kang, Y
    Jung, DW
    Park, CG
    Moon, JT
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 : 104 - 112
  • [24] Nanomolecular resists with adamantane core for 193-nm lithography
    Kim, JB
    Oh, TH
    Kim, K
    Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 603 - 610
  • [25] The role of photoacid structure on the performance of 193-nm resists
    Allen, RD
    Opitz, J
    Larson, CE
    DiPietro, RA
    Breyta, G
    Hofer, DC
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 : 44 - 54
  • [26] Extraction of exposure parameters for 193-nm chemically amplified resist and its application to simulation
    Sohn, YS
    Lee, EM
    Sung, MG
    Lee, YM
    Bak, HJ
    An, I
    Oh, HK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 (01) : 152 - 156
  • [27] Photoacid structure effects on environmental stability of 193 nm chemically amplified positive resists
    ULSI Device Development Laboratory, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 B (7099-7102):
  • [28] Novel functional nortricyclene polymers and copolymers for 248 and 193 nm chemically amplified resists
    Niu, QJ
    Frechet, JMJ
    Okoroanyanwu, U
    Byers, JD
    Willson, CG
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 : 113 - 123
  • [29] Photoacid structure effects on environmental stability of 193 nm chemically amplified positive resists
    Yoshino, H
    Itani, T
    Takimoto, M
    Tanabe, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12B): : 7099 - 7102
  • [30] Fluorinated chemically amplified dissolution inhibitors for 157 nm nanolithography
    Fresco, ZM
    Bensel, N
    Suez, I
    Backer, SA
    Fréchet, JMJ
    Conley, W
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2003, 16 (01) : 27 - 35
12345