Millimeter wave InP HEMT technology: Performance and applications

被引：0
|
作者：
Nguyen, Loi D. [1 ]
Le, Minh V. [1 ]
Liu, Takyiu [1 ]
Lui, Mark [1 ]
Kaneko, Karen [1 ]
Holzman, Eric [1 ]
Delaney, Michael J. [1 ]
机构：
[1] Hughes Research Lab, Malibu, United States
来源：
Solid-State Electronics | 1995年 / 38卷 / 09期
关键词：
High electron mobility transistors;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：1575 / 1579
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