INP GUNN-DIODES SERVE MILLIMETER-WAVE APPLICATIONS

被引：0
|
作者：
CROWLEY, JD
DALRYMPLE, RE
HANG, C
TRINGALI, DR
FANK, FB
WANDINGER, L
机构：
来源：
MICROWAVES & RF | 1994年 / 33卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gunn diodes are often utilized as power-generation devices in a wide range of microwave and millimeter-wave applications. By employing indium-phosphate (InP)-based Gunn diodes, a series of millimeter-wave oscillators has achieved continuous-wave (CW) output powers of 500 mW at 35 GHz and 50 mW at 140 GHz.
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页码：143 / 146
页数：4
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