New one- and two-dimensional algorithms for the transient simulation of semiconductor devices

被引：0
|
作者：
Towers, M.S. [1 ]
McCowen, A. [1 ]
机构：
[1] Univ Coll of Swansea, United Kingdom
来源：
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields | 1988年 / 1卷 / 02期
关键词：
Mathematical Models - Mathematical Techniques--Algorithms;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
One- and two-dimensional algorithms for the transient simulation of semiconductor devices are presented which incorporate a solenoidal total current. The paper includes results from one-dimensional simulation of a p-n junction, including forward-to-reverse bias switching and also switch-on into high injection in an asymmetric structure. A discretization scheme for the two-dimensional formulation is described with details on handling voltage driven terminals and the associated boundary conditions.
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页码：93 / 102
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