CHARGE EXCHANGE BETWEEN TRAPS IN InSb OXIDE IN Au-InSb OXIDE-InSb STRUCTURES.

被引：0
|
作者：
Vavilov, V.S.
Plotnikov, A.F.
Shubin, V.E.
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来源：
| 1972年 / 5卷 / 11期
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DIELECTRIC MATERIALS - ELECTRIC FIELDS;
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摘要：
An investigation was made of the influence of an electric field and illumination on the electron charge localized at traps in a dielectric (InSb oxide) near the interface between InSb and the dielectric. The change in the charge state of the traps under the influence of the relatively weak electric fields was attributed to tunnel translations of electrons from the traps in the dielectric to the surface states in the semiconductor.
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页码：1799 / 1803
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