ANOMALOUS SUBTHRESHOLD CURRENT-VOLTAGE CHARACTERISTICS OF N-CHANNEL SOI MOSFET'S.

被引：0
|
作者：
Fossum, Jerry G. [1 ]
Sundaresan, Ravishankar [1 ]
Matloubian, Mishel [1 ]
机构：
[1] Univ of Florida, Gainesville, FL,, USA, Univ of Florida, Gainesville, FL, USA
来源：
Electron device letters | 1987年 / EDL-8卷 / 11期
关键词：
ANOMALOUS SUBTHRESHOLD I-V CHARACTERISTICS - N-CHANNEL SOI MOSFET;
D O I：
10.1109/edl.1987.26722
中图分类号：
学科分类号：
摘要：
引用
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页码：544 / 546
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