Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

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[1] Choi, B.J.
[2] Jeong, D.S.
[3] Kim, S.K.
[4] 1,Rohde, C.
[5] Choi, S.
[6] Oh, J.H.
[7] Kim, H.J.
[8] Hwang, C.S.
[9] Szot, K.
[10] Waser, R.
[11] 2,Reichenberg, B.
[12] Tiedke, S.
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Choi, B.J. | 1600年 / American Institute of Physics Inc.卷 / 98期
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The work was supported by the National Program for 0.1 Terabit NVM Devices and by the National Research Laboratories program of the Korean Ministry of Science and Technology. The collaboration between Seoul National University and Juelich groups was supported by the Alexander von Humboldt foundation. Two of the authors (C.S.H. and R.W.) acknowledge that. FIG. 1. (a) Typical current density vs voltage ( J - V ) curve of a 57-nm-thick TiO 2 film with Pt electrodes. (b) J - V curve under positive and negative biases. FIG. 2. J - V curves of a 57-nm-thick film plotted in logarithmic scale. FIG. 3. Variation of the J - V curve of the high-resistance state with the measurement temperature in the voltage region with linear conduction. FIG. 4. J - V curves of samples in the low-resistance state at measurement temperatures of (a) 50; (b); 70; and (c) 110 °C. FIG. 5. Retention behavior of samples in the low- and high-resistance states; respectively. The resistance of both states increases with time even at room temperature. FIG. 6. Variation in the resistance of the (a) low- and (b) high-resistance states as a function of the TiO 2 film thickness measured at 0.5 V. FIG. 7. Conductivity mapping results of the (a) low- and (b) high-resistance state TiO 2 films; using HVAFM. The bright spots represent the conducting spots. FIG. 8. Distribution of the number of conducting spots as a function of the current at each spot for the (a) low- and (b) high-resistance states measured by HVAFM. The inset figures show the rectified distributions after subtracting the most probable current. FIG. 9. I - V curve in logarithmic scale of a typical nonconducting; a conducting spot of the low-resistance state; and a conducting spot of the high-resistance state. FIG. 10. Schematic of the multiple effect for the (a) 1ow-resistive state and (b) high-resistive state. (c) shows a schematic of the convolution effect for the high-resistance state considering the larger tip-surface interaction area in the case of APAFM. FIG. 11. Distribution of the number of conducting spots as a function of the current at each spot for the (a) low- and (b) high-resistance states measured by APAFM. The inset figures show the rectified distributions afer subtracting the most probable current;
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