Coupled finite element model for the sublimation growth of SiC

被引：0
|
作者：
Cent for Scientific Computing, Espoo, Finland [1 ]
机构：
来源：
Mater Sci Forum | / pt 1卷 / 65-68期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [11] Pressure effect in sublimation growth of bulk SiC
    Kitou, Y
    Bahng, W
    Nishizawa, S
    Nishino, S
    Arai, K
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 83 - 86
  • [12] Optimization of the design of a crucible for a SiC sublimation growth system using a global model
    Chen, X. J.
    Liu, L. J.
    Tezuka, H.
    Usuki, Y.
    Kakimoto, K.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) : 1810 - 1814
  • [13] SIC BOULE GROWTH BY SUBLIMATION VAPOR TRANSPORT
    BARRETT, DL
    SEIDENSTICKER, RG
    GAIDA, W
    HOPKINS, RH
    CHOYKE, WJ
    JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) : 17 - 23
  • [14] Considerations on the crystal morphology in the sublimation growth of SiC
    Råback, P
    Yakimova, R
    Syväjärvi, M
    Iakimov, T
    Nieminen, R
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 95 - 98
  • [15] Seed surface preparation for SiC sublimation growth
    Pelissier, B
    Moulin, C
    Pernot, E
    Anikin, M
    Grosse, P
    Faure, C
    Ferrand, B
    Couchaud, M
    Basset, G
    Madar, R
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 47 - 50
  • [16] Numerical simulation of SiC boule growth by sublimation
    Madar, R
    Pons, M
    Dedulle, JM
    Blanquet, E
    Pisch, A
    Grosse, P
    Faure, C
    Anikin, M
    Bernard, C
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 25 - 30
  • [17] State of the art in the modelling of SiC sublimation growth
    Pons, M.
    Anikin, M.
    Chourou, K.
    Dedulle, J.M.
    Madar, R.
    Blanquet, E.
    Pisch, A.
    Bernard, C.
    Grosse, P.
    Faure, C.
    Basset, G.
    Grange, Y.
    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 1999, 61 : 18 - 28
  • [18] Pressure effect in sublimation growth of bulk SiC
    Kitou, Yasuo, 1600, Trans Tech Publ Ltd, Uetikon-Zuerich, Switzerland (338):
  • [19] Mechanism of nitrogen incorporation in sublimation growth of SiC
    Naitoh, M
    Hara, K
    Hirose, F
    Onda, S
    JOURNAL OF CRYSTAL GROWTH, 2002, 237 : 1192 - 1195
  • [20] Some aspects of sublimation growth of SiC ingots
    Avramenko, S.F.
    Kiselev, V.S.
    Valakh, M.Ya.
    Yukhimchuk, V.A.
    Materials Science Forum, 2001, 353-356 : 41 - 44
12345