Control of nitrogen incorporation in Ga(ln)NAs grown by metalorganic vapor phase epitaxy

被引：0
|
作者：
机构：
[1] Derluyn, J.
[2] Moerman, I.
[3] Leys, M.R.
[4] Patriarche, G.
[5] Sek, G.
[6] Kudrawiec, R.
[7] Rudno-Rudziński, W.
[8] Ryczko, K.
[9] Misiewicz, J.
来源：
Derluyn, J. (joff.derluyn@imec.be) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词：
Metallorganic chemical vapor deposition - Semiconducting gallium compounds - Semiconductor quantum wells - X ray diffraction;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy was studied. A systematic investigation was reported that showed that nitrogen incorporation was actually improved by using a high flow of tertiarybutylarsine (TBA). The link the optical of these quantum wells (QW) to the abruptness of the QWs and the nitrogen content.
引用
收藏
相关论文
共 50 条
  • [1] Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy
    Derluyn, J
    Moerman, I
    Leys, MR
    Patriarche, G
    Sek, G
    Kudrawiec, R
    Rudno-Rudzinski, W
    Ryczko, K
    Misiewicz, J
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (04) : 2752 - 2754
  • [2] INCORPORATION OF NITROGEN IN ZNSE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    HOFFMANN, A
    HEITZ, R
    LUMMER, B
    FRICKE, C
    KUTZER, V
    BROSER, I
    TAUDT, W
    GLEITSMANN, G
    HEUKEN, M
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 379 - 384
  • [3] An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxy
    Ou, J
    Lin, HC
    Pan, CY
    Shu, CK
    Chen, WK
    Lee, MC
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 453 - 456
  • [4] An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxy
    Ou, J
    Chen, WK
    Lin, HC
    Pan, YC
    Lee, MC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (6A): : L633 - L636
  • [5] Nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy
    Rommeluère, JF
    Svob, L
    Jomard, F
    Mimila-Arroyo, J
    Amiri, G
    Lusson, A
    Sallet, V
    Gorochov, O
    Galtier, P
    Marfaing, Y
    11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS, 2004, 1 (04): : 904 - 907
  • [6] Zinc incorporation into InP grown by atmospheric pressure metalorganic vapor phase epitaxy
    Logan, RA
    Chu, SNG
    Geva, M
    Ha, NT
    Thurmond, CD
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (03) : 1371 - 1377
  • [7] Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy
    Leszczynski, M.
    Czernecki, R.
    Krukowski, S.
    Krysko, M.
    Targowski, G.
    Prystawko, P.
    Plesiewicz, J.
    Perlin, P.
    Suski, T.
    JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) : 496 - 499
  • [8] Incorporation modes of silicon in GaAs:Si grown by metalorganic vapor phase epitaxy
    Beji, L.
    Rebey, A.
    El Jani, B.
    EPJ Applied Physics, 1998, 4 (03): : 269 - 273
  • [9] Incorporation modes of silicon in GaAs: Si grown by metalorganic vapor phase epitaxy
    Beji, L
    Rebey, A
    El Jani, B
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 1998, 4 (03): : 269 - 273
  • [10] Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
    Borg, B. Mattias
    Dick, Kimberly A.
    Eymery, Joel
    Wernersson, Lars-Erik
    APPLIED PHYSICS LETTERS, 2011, 98 (11)
12345