Temperature dependence of electron mobility in Si inversion layers

被引：0
|
作者：
Masaki, Kazuo [1 ]
Taniguchi, Kenji [1 ]
Hamaguchi, Chihiro [1 ]
Wase, Masao [1 ]
机构：
[1] Anan Coll of Technology, Tokushima, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 11 A期
关键词：
Electron Mobility - Inversion Layers;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：2734 / 2739
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