CALCULATED TEMPERATURE-DEPENDENCE OF MOBILITY IN SILICON INVERSION-LAYERS

被引：250
|
作者：
STERN, F
机构：
来源：
PHYSICAL REVIEW LETTERS | 1980年 / 44卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.44.1469
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：1469 / 1472
页数：4
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