HOPPING CONDUCTION IN PHOSPHORUS-DOPED SILICON.

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作者：
Sasaki, W. [1 ]
机构：
[1] Toho Univ, Dep of Physics,, Funabashi, Jpn, Toho Univ, Dep of Physics, Funabashi, Jpn
来源：
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1985年 / 52卷 / 03期
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摘要：
14
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页码：427 / 435
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