SINTERED SILICON CARBIDE.

被引:0
|
作者
Knoch, H. [1 ]
Kracker, J. [1 ]
机构
[1] Elektroschmelzwerk Kempten GmbH, Kempten, West Ger, Elektroschmelzwerk Kempten GmbH, Kempten, West Ger
来源
CFI Ceramic Forum International | 1987年 / 64卷 / 05期
关键词
BEARINGS - Materials - CERAMIC MATERIALS - Sintering;
D O I
暂无
中图分类号
学科分类号
摘要
This report deals with the wear resistance of sintered SiC and describes some practical applications. The relationship between microstructure and tribological properties is explained. The potential applications range from the hydrogenation of coal to the desulfurization of flue gases and on to the engineering of pumps for corrosive and/or abrasive liquids, primarily in the chemical industry.
引用
收藏
页码:159 / 163
相关论文
共 50 条
  • [31] Sintering Phenomena of Recrystallized, Pressureless-Sintered, Hot-Pressed and Hot-Isostatic-Pressed Silicon Carbide.
    Kriegesmann, J.
    CFI Ceramic Forum International, 1987, 64 (8-9): : 301 - 303
  • [32] CHEMICAL PROPERTIES OF THE SURFACE OF CARBON ADSORBENTS FROM ZIRCONIUM CARBIDE AND SILICON CARBIDE.
    Babkin, O.E.
    Ivakhnyuk, G.K.
    Fedorov, N.F.
    Lukin, Yu.N.
    Journal of applied chemistry of the USSR, 1987, 60 (5 pt 1): : 968 - 971
  • [33] BRAZING CEMENTED CARBIDE.
    Roberts, P.M.
    Metal construction, 1987, 19 (01): : 12 - 18
  • [34] OBSERVATIONS OF INTERGRANULAR, CRACK DEFLECTION TOUGHENING MECHANISMS IN SILICON CARBIDE.
    Faber, K.T.
    Evans, A.G.
    1984, : 99 - 108
  • [35] LUMINESCENCE OF SCANDIUM- AND ALUMINUM-DOPED SILICON CARBIDE.
    Andreev, A.P.
    Safaraliev, G.K.
    Tairov, Yu.M.
    Tsvetkov, V.F.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (08):
  • [36] INFRARED LUMINESCENCE AND ENERGY LEVELS OF DEEP CENTERS IN SILICON CARBIDE.
    Gorban', I.S.
    Slobodyanyuk, A.V.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (06): : 668 - 670
  • [37] SIMPLE PROCESSING METHOD FOR HIGH-STRENGTH SILICON CARBIDE.
    Hurst, Janet B.
    Dutta, Sunil
    1600, (70):
  • [38] IMPLANTATION PROFILES OF LOW-ENERGY HELIUM IN SILICON CARBIDE.
    Miyagawa, Soji
    Ato, Yasuro
    Miyagawa, Yoshiko
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1984, 23 (10): : 1380 - 1384
  • [39] PLASMA-INDUCED MORPHOLOGICAL CHANGES IN alpha -SILICON CARBIDE.
    Porter, Richard L.
    1600, (70):
  • [40] Silicon carbide powder and sintered materials
    Tanaka, Hidehiko
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2011, 119 (1387) : 218 - 233