共 50 条
- [21] DEOXIDATION OF STEEL MELTS WITH METALLURGICAL SILICON CARBIDE. MPT. Metallurgical plant and technology, 1981, 4 (05): : 34 - 37
- [25] Effect of surface stoichiometry on nucleation and growth of silicon carbide. SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 249 - 252
- [26] PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SCANDIUM-DOPED SILICON CARBIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (05): : 682 - 683
- [28] INFRARED ABSORPTION SPECTRUM OF PARAMAGNETIC NITROGEN IN SILICON CARBIDE. Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1976, 18 (10): : 1795 - 1797
- [29] DIFFUSION OF BORON IN p-TYPE SILICON CARBIDE. Soviet physics. Semiconductors, 1984, 18 (01): : 27 - 30
- [30] PHOTOCAPACITANCE EFFECT IN BORON-DOPED SILICON CARBIDE. Soviet physics. Semiconductors, 1981, 15 (03): : 283 - 286