共 50 条
- [1] RADIATION-DEFECT ANNIHILATION CENTERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (04): : 631 - &
- [2] ROLE OF RADIATION-DEFECT ANNIHILATION CENTERS IN SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 127 - 128
- [3] RADIATION-DEFECT FORMATION IN GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1949 - +
- [6] PHOTO-RESISTORS MADE OF P-TYPE SILICON COMPENSATED BY RADIATION-DEFECT CENTERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (12): : 1410 - 1411
- [7] THRESHOLD OF FORMATION OF RADIATION-DEFECT CLUSTERS IN A SEMICONDUCTOR SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 218 - 219
- [8] HOPPING CONDUCTION IN GERMANIUM BETWEEN SHALLOW RADIATION-DEFECT LEVELS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 591 - 592
- [9] Radiation-defect accumulation close to the grain boundaries in crystals on irradiation RUSSIAN METALLURGY, 1997, (05): : 121 - 125
- [10] INTERSTITIAL-IMPURITY RADIATION-DEFECT INTERACTIONS IN FERRITIC STEELS JOURNAL OF METALS, 1985, 37 (10): : 34 - 39