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- [3] INFLUENCE OF GOLD ON RADIATION-DEFECT FORMATION IN P-TYPE GERMANIUM DOPED WITH ZINC AND MERCURY SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (12): : 1416 - 1418
- [4] HOPPING CONDUCTION IN GERMANIUM BETWEEN SHALLOW RADIATION-DEFECT LEVELS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 591 - 592
- [5] THRESHOLD OF FORMATION OF RADIATION-DEFECT CLUSTERS IN A SEMICONDUCTOR SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 218 - 219
- [6] RADIATION-DEFECT ANNIHILATION CENTERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (04): : 631 - &
- [9] ROLE OF RADIATION-DEFECT ANNIHILATION CENTERS IN SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 127 - 128
- [10] Radiation-defect accumulation close to the grain boundaries in crystals on irradiation RUSSIAN METALLURGY, 1997, (05): : 121 - 125