共 50 条
- [42] Atomic layer etching of GaN using Cl2 and He or Ar plasma JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (02):
- [43] Characteristics of n-GaN after Cl2/Ar and Cl2/N 2 Inductively Coupled Plasma Etching Han, Y.-J., 1600, Japan Society of Applied Physics (42):
- [44] Etching of metallic materials with Cl2 gas cluster ion beam SURFACE & COATINGS TECHNOLOGY, 2011, 206 (05): : 789 - 791
- [45] Effect of Ge in Cl2 plasma for reactive ion etching of GaN GAN AND RELATED ALLOYS-2001, 2002, 693 : 693 - 698
- [46] Reactive ion beam etching of in-containing compound semiconductors in an inductively coupled Cl2/Ar plasma JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (01): : 38 - 43
- [48] Etching mechanism of (Ba,Sr)TiO3 films in high density Cl2/BCl3/Ar plasma JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04): : 1381 - 1384
- [50] Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar Journal of Materials Science: Materials in Electronics, 2012, 23 : 1224 - 1228