共 50 条
- [1] Characteristics of n-GaN after Cl2/Ar and Cl2/N2 inductively coupled plasma etching [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (10): : 6409 - 6412
- [3] Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases [J]. J Appl Phys, 3 (1970-1974):
- [5] Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar [J]. Journal of Materials Science: Materials in Electronics, 2012, 23 : 1224 - 1228
- [6] Inductively coupled plasma etching of III-nitrides in Cl2/Xe, Cl2/Ar and Cl2/He [J]. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 : art. no. - G6.56
- [7] Etch characteristics of GaN using inductively coupled Cl2 plasma etching [J]. CURRENT ISSUES OF PHYSICS IN MALAYSIA, 2008, 1017 : 353 - 357
- [9] Cl2/Ar based Inductively Coupled Plasma Etching of GaN/AlGaN Structure [J]. 16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES, 2012, 8549