Characteristics of n-GaN after Cl2/Ar and Cl2/N 2 Inductively Coupled Plasma Etching

被引:0
|
作者
机构
[1] Han, Yan-Jun
[2] Xue, Song
[3] Guo, Wen-Ping
[4] Sun, Chang-Zheng
[5] Hao, Zhi-Biao
[6] Luo, Yi
来源
Han, Y.-J. | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Characteristics of n-GaN after Cl2/Ar and Cl2/N2 inductively coupled plasma etching
    Han, YJ
    Xue, S
    Guo, WP
    Sun, CZ
    Hao, ZB
    Luo, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (10): : 6409 - 6412
  • [2] Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases
    Sheu, JK
    Su, YK
    Chi, GC
    Jou, MJ
    Liu, CC
    Chang, CM
    Hung, WC
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) : 1970 - 1974
  • [3] Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases
    Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
    不详
    不详
    [J]. J Appl Phys, 3 (1970-1974):
  • [4] Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar
    Yang, G. F.
    Chen, P.
    Wu, Z. L.
    Yu, Z. G.
    Zhao, H.
    Liu, B.
    Hua, X. M.
    Xie, Z. L.
    Xiu, X. Q.
    Han, P.
    Shi, Y.
    Zhang, R.
    Zheng, Y. D.
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2012, 23 (06) : 1224 - 1228
  • [5] Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar
    G. F. Yang
    P. Chen
    Z. L. Wu
    Z. G. Yu
    H. Zhao
    B. Liu
    X. M. Hua
    Z. L. Xie
    X. Q. Xiu
    P. Han
    Y. Shi
    R. Zhang
    Y. D. Zheng
    [J]. Journal of Materials Science: Materials in Electronics, 2012, 23 : 1224 - 1228
  • [6] Inductively coupled plasma etching of III-nitrides in Cl2/Xe, Cl2/Ar and Cl2/He
    Cho, H
    Hahn, YB
    Hays, DC
    Jung, KB
    Donovan, SM
    Abernathy, CR
    Pearton, SJ
    Shul, RJ
    [J]. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 : art. no. - G6.56
  • [7] Etch characteristics of GaN using inductively coupled Cl2 plasma etching
    Rosli, Siti Azlina
    Aziz, A. Abdul
    [J]. CURRENT ISSUES OF PHYSICS IN MALAYSIA, 2008, 1017 : 353 - 357
  • [8] Inductively coupled plasma etching of doped GaN films with Cl2/Ar discharges
    Cho, BC
    Im, YH
    Hahn, YB
    Nahm, KS
    Lee, YS
    Pearton, SJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (10) : 3914 - 3916
  • [9] Cl2/Ar based Inductively Coupled Plasma Etching of GaN/AlGaN Structure
    Rawal, D. S.
    Arora, Henika
    Agarwal, V. R.
    Kapoor, Ashok
    Vinayak, Seema
    Sehgal, B. K.
    Muralidharan, R.
    Saha, Dipankar
    Malik, H. K.
    [J]. 16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES, 2012, 8549
  • [10] Dry etching of SiC in inductively coupled Cl2/Ar plasma
    Jiang, LD
    Plank, NOV
    Blauw, MA
    Cheung, R
    van der Drift, E
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (13) : 1809 - 1814