Equations compute diode junction temperature

被引：0
|
作者：
Gupta, A.K. [1 ]
Ray, U.C. [1 ]
机构：
[1] Ministry of Defence, Delhi, India
来源：
Microwaves & RF | 1995年 / 34卷 / 02期
关键词：
Computational methods - Heat flux - Heat losses - Heat sinks - Interfaces (materials) - Product design - Semiconductor device models - Semiconductor device structures - Semiconductor junctions - Semiconductor materials - Temperature - Thermoanalysis;
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学科分类号：
摘要：
A critical factor in the design of high-performance, pulsed W-band IMPATT diodes is the accurate estimation of the transient intra-pulse junction temperature. For this reason, a simple physics-based model was developed to calculate the junction-temperature profile of IMPATTS operated with short, low-duty-factor pulses. The efficiency of the Tj profile as the model is called is demonstrated by considering a typical 5-W, W band, silicon DDR IMPATT diode.
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