Equations compute diode junction temperature

被引：0

作者：

Gupta, A.K. ^{[1
]}

Ray, U.C. ^{[1
]}

机构：

[1] Ministry of Defence, Delhi, India

来源：

Microwaves & RF | 1995年 / 34卷 / 02期

关键词：

Computational methods - Heat flux - Heat losses - Heat sinks - Interfaces (materials) - Product design - Semiconductor device models - Semiconductor device structures - Semiconductor junctions - Semiconductor materials - Temperature - Thermoanalysis;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A critical factor in the design of high-performance, pulsed W-band IMPATT diodes is the accurate estimation of the transient intra-pulse junction temperature. For this reason, a simple physics-based model was developed to calculate the junction-temperature profile of IMPATTS operated with short, low-duty-factor pulses. The efficiency of the Tj profile as the model is called is demonstrated by considering a typical 5-W, W band, silicon DDR IMPATT diode.

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