共 50 条
- [28] EFFECT OF SI AND GE INTERFACE LAYERS ON THE SCHOTTKY-BARRIER HEIGHT OF METAL CONTACTS TO GAAS CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 125 - 136
- [29] EFFECT OF ORIENTATION ON THE SCHOTTKY-BARRIER HEIGHT OF THERMODYNAMICALLY STABLE EPITAXIAL METAL GAAS STRUCTURES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 1946 - 1952
- [30] On the enhancement of effective barrier height in Ti/n-GaAs Schottky barrier diodes NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 119 (04): : 519 - 522