Temperature compensation technique of InGaP/GaAs power HBT with Novel bias circuit using schottky diodes

被引：0
|
作者：
Murayama, Keiichi [1 ]
Nishijima, Masaaki [2 ]
Yanagihara, Manabu [2 ]
Tanaka, Tsuyoshi [2 ]
机构：
[1] Discrete Division, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., Japan
[2] Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., Japan
来源：
IEICE Transactions on Electronics | 2001年 / E84-C卷 / 10期
关键词：
Bias circuit - Power device - Quiescent current - Temperature compensation;
D O I：
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学科分类号：
摘要：
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页码：1379 / 1382
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