FORMATION MECHANISM OF THE SPIRALS IN THE EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS SILICON FILMS.

被引：0
|
作者：
Chen Zhiming [1 ]
机构：
[1] Acad Sinica, Inst of Semiconductors, China, Acad Sinica, Inst of Semiconductors, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1986年 / 7卷 / 01期
关键词：
EXPLOSIVE CRYSTALLIZATION - FILMS INHOMOGENEITY - FORMATION MECHANISM OF SPIRALS - INCOHERENT LIGHT - STOPPING MECHANISM;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：102 / 105
相关论文
共 50 条
  • [1] Explosive crystallization mechanism of ultradisperse amorphous films
    Olemskoi, AI
    Khomenko, AV
    Koverda, VP
    PHYSICA A, 2000, 284 (1-4): : 79 - 96
  • [2] ELECTRON BEAM INDUCED EXPLOSIVE CRYSTALLIZATION OF UNSUPPORTED AMORPHOUS GERMANIUM THIN FILMS.
    Sharma, R.K.
    Bansal, S.K.
    Nath, R.
    Mehra, R.M.
    Bahadur, Kanwar
    Mall, R.P.
    Chaudhary, K.L.
    Garg, C.L.
    1600, (55):
  • [3] Explosive crystallization of amorphous silicon films by flash lamp annealing
    Ohdaira, Keisuke
    Fujiwara, Tomoko
    Endo, Yohei
    Nishizaki, Shogo
    Matsumura, Hideki
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (04)
  • [4] Superlattice formation during explosive crystallization of amorphous cobalt films
    Russian Acad of Sciences, Krasnoyarsk, Russia
    Surf Invest X Ray Synchrotron Neutron Techniq, 8 (873-877):
  • [5] Lateral Crystallization Velocity in Explosive Crystallization of Amorphous Silicon Films Induced by Flash Lamp Annealing
    Ohdaira, Keisuke
    Tomura, Naohito
    Ishii, Shohei
    Matsumura, Hideki
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (09) : H372 - H374
  • [6] RBS CHARACTERIZATION OF AMORPHOUS SILICON FILMS.
    Hiraki, Akio
    Imura, Takeshi
    Japan Annual Reviews in Electronics, Computers & Telecommunications: Amorphous Semiconductor Techn, 1981, : 52 - 67
  • [7] NOISE SPECTROSCOPY IN AMORPHOUS SILICON FILMS.
    Anderson, J.C.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1983, 48 (1 pt 2): : 31 - 45
  • [8] STRUCTURE OF AMORPHOUS GERMANIUM AND SILICON FILMS.
    Alekseev, A.G.
    Bardamid, A.F.
    Verkhovskaya, T.A.
    Shaldervan, A.I.
    1787, (16):
  • [9] EPITAXIAL EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON
    POLMAN, A
    MOUS, DJW
    STOLK, PA
    SINKE, WC
    BULLELIEUWMA, CWT
    VANDENHOUDT, DEW
    APPLIED PHYSICS LETTERS, 1989, 55 (11) : 1097 - 1099
  • [10] TRIGGERING EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON
    POLMAN, A
    ROORDA, S
    STOLK, PA
    SINKE, WC
    JOURNAL OF CRYSTAL GROWTH, 1991, 108 (1-2) : 114 - 120
12345