FORMATION MECHANISM OF THE SPIRALS IN THE EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS SILICON FILMS.

被引：0
|
作者：
Chen Zhiming [1 ]
机构：
[1] Acad Sinica, Inst of Semiconductors, China, Acad Sinica, Inst of Semiconductors, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1986年 / 7卷 / 01期
关键词：
EXPLOSIVE CRYSTALLIZATION - FILMS INHOMOGENEITY - FORMATION MECHANISM OF SPIRALS - INCOHERENT LIGHT - STOPPING MECHANISM;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：102 / 105
相关论文
共 50 条
  • [41] Scale invariance of the structure upon explosive crystallization of amorphous films
    L. I. Kveglis
    V. A. Seredkin
    A. V. Kuzovnikov
    Journal of Experimental and Theoretical Physics Letters, 2005, 82 : 22 - 25
  • [42] MECHANISM OF ELECTRICAL CONDUCTION IN AMORPHOUS Ge - As - Se FILMS.
    Baran, N.Yu.
    Dovgoshei, N.I.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (09): : 1167 - 1168
  • [43] THE CRYSTALLIZATION OF GD AMORPHOUS-SILICON FILMS
    HE, YL
    SHEN, ZY
    YAN, YH
    KEXUE TONGBAO, 1983, 28 (11): : 1466 - 1470
  • [44] CRYSTALLIZATION OF SURFACE AND SUBSURFACE AMORPHOUS SILICON FILMS
    SCHWUTTKE, GH
    BRACK, K
    DEANGELI.H
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (11): : 1454 - +
  • [45] ANNEALING STUDIES ON HYDROGENATED AMORPHOUS SILICON-TIN FILMS.
    Morimoto, Akiharu
    Kataoka, Toyotaka
    Shimizu, Tatsuo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1985, 24 (09): : 1122 - 1129
  • [46] NOVEL TECHNIQUE FOR DEPOSITION OF HYDROGENATED AMORPHOUS SILICON THIN FILMS.
    Robertson, P.A.
    Milne, W.I.
    1600, (22):
  • [47] CHARACTERISTICS OF RECOMBINATION PROCESSES IN DOPED HYDRATED AMORPHOUS SILICON FILMS.
    Zvyagin, I.P.
    Kurova, I.A.
    Ormont, N.N.
    Chitaya, K.B.
    Soviet physics journal, 1987, 30 (06): : 451 - 460
  • [48] PLANAR CONDUCTION IN INHOMOGENEOUS FILMS. APPLICATION TO AMORPHOUS SILICON.
    Zvyagin, I.P.
    1600, (86):
  • [49] EFFECT OF HYDROGEN ON PHOTOLUMINESCENCE SPECTRA OF SILICON NITRIDE AMORPHOUS FILMS.
    Vasilev, V.V.
    Mikhailovskii, I.P.
    Svitashev, K.K.
    1600, (95):
  • [50] Phase Transformation Mechanism in Pulsed Excimer Laser Crystallization of Amorphous Silicon Thin Films
    Kuo, C-C.
    LASERS IN ENGINEERING, 2010, 19 (3-4) : 225 - 238
12345