Non-volatile memories using SrBi2Ta2O9 ferroelectrics

被引：0

作者：

Jones Jr., R.E. ^{[1
]}

Chu, P.Y. ^{[1
]}

Jiang, B. ^{[1
]}

Melnick, B.M. ^{[1
]}

Taylor, D.J. ^{[1
]}

White Jr., B.E. ^{[1
]}

Zafar, S. ^{[1
]}

Price, D. ^{[1
]}

Zurcher, P. ^{[1
]}

Gillespie, S.J. ^{[1
]}

Otsuki, T. ^{[1
]}

Sumi, T. ^{[1
]}

Judai, Y. ^{[1
]}

Uemoto, Y. ^{[1
]}

Fujii, E. ^{[1
]}

机构：

[1] Motorola, Austin, United States

来源：

Integrated Ferroelectrics | 1997年 / 17卷 / 1 -4 pt 1期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：21 / 30

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[1] Non-volatile memories using SrBi2Ta2O9 ferroelectrics
Jones, RE
Chu, PY
Jiang, B
Melnick, BM
Taylor, DJ
White, BE
Zafar, S
Price, D
Zurcher, P
Gillespie, SJ
Otsuki, T
Sumi, T
Judai, Y
Uemoto, Y
Fujii, E
Hayashi, S
Moriwaki, N
Azuma, M
Shimada, Y
Arita, K
Hirano, H
Nakane, J
Nakakum, T
Kano, G
INTEGRATED FERROELECTRICS, 1997, 17 (1-4) : 21 - 30
[2] Electrical characterization of SrBi2Ta2O9 capacitors for non-volatile memory operation
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[3] Imprint in ferroelectric SrBi2Ta2O9 capacitors for non-volatile memory applications
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[5] Integration aspects and electrical properties of SrBi2Ta2O9 for non-volatile memory applications
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[6] Performance of SrBi2Ta2O9 for low-voltage, non-volatile memory applications
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[7] SrBi2Ta2O9 capacitors for a mega-bit ferroelectric non-volatile memory
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[8] Temperature dependence of the electrical performance of SrBi2Ta2O9 for non-volatile memory applications
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ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 1996, : 55 - 58
[9] Pulsed laser ablation synthesis and characterization of layered SrBi2Ta2O9 films and integration into capacitors for non-volatile memories
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[10] Pulsed laser ablation synthesis and characterization of layered SrBi2Ta2O9 films and integration into capacitors for non-volatile memories
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