Imprint in ferroelectric SrBi2Ta2O9 capacitors for non-volatile memory applications

被引：0
|
作者：
Grossmann, M [1 ]
Lohse, O
Bolten, D
Waser, R
Hartner, W
Schindler, G
Dehm, C
Nagel, N
Joshi, V
Solayappan, N
Derbenwick, G
机构：
[1] Univ Technol Aachen, Inst Werkstoffe Elektrotech, D-52056 Aachen, Germany
[2] Siemens AG, Semicond Grp, Dept HL MP E TF, D-81730 Munich, Germany
[3] Symetrix Corp, Colorado Springs, CO USA
来源：
INTEGRATED FERROELECTRICS | 1998年 / 22卷 / 1-4期
关键词：
ferroelectric thin films; SrBi2Ta2O9; SBT; imprint;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Imprint is known as a failure mechanism in ferroelectric capacitors due to a voltage shift in the hysteresis curve. A detailed study to investigate the time, temperature and bias voltage dependence of the voltage shift was performed on MOD SET thin films. Lifetime extrapolation under operating conditions (125 degrees C) reveal values for the lifetime of well over ten years.
引用
收藏
页码：615 / 627
页数：13
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