Non-volatile memories using SrBi2Ta2O9 ferroelectrics

被引：0

作者：

Jones Jr., R.E. ^{[1
]}

Chu, P.Y. ^{[1
]}

Jiang, B. ^{[1
]}

Melnick, B.M. ^{[1
]}

Taylor, D.J. ^{[1
]}

White Jr., B.E. ^{[1
]}

Zafar, S. ^{[1
]}

Price, D. ^{[1
]}

Zurcher, P. ^{[1
]}

Gillespie, S.J. ^{[1
]}

Otsuki, T. ^{[1
]}

Sumi, T. ^{[1
]}

Judai, Y. ^{[1
]}

Uemoto, Y. ^{[1
]}

Fujii, E. ^{[1
]}

机构：

[1] Motorola, Austin, United States

来源：

Integrated Ferroelectrics | 1997年 / 17卷 / 1 -4 pt 1期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：21 / 30

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