Measurement and modelling of sensitivity and noise of MOS magnetic field-effect transistors

被引:0
|
作者
Technical Univ of Darmstadt, Darmstadt, Germany [1 ]
机构
来源
Sens Actuators A Phys | / 1-3卷 / 346-351期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [11] Bipolar theory of MOS field-effect transistors and experiments
    Sah, Chih-Tang
    Jie, Bin B.
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 28 (10): : 1497 - 1502
  • [12] GATE LEAKAGE CURRENTS IN MOS FIELD-EFFECT TRANSISTORS
    KENNEDY, EJ
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (08): : 1098 - &
  • [13] TeraHertz electronic noise in field-effect transistors
    C. Palermo
    H. Marinchio
    P. Shiktorov
    E Starikov
    V. Gružinskis
    A. Mahi
    L Varani
    Journal of Computational Electronics, 2015, 14 : 87 - 93
  • [14] EXCESS NOISE IN SELECTED FIELD-EFFECT TRANSISTORS
    LLACER, J
    MEIER, DF
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (01) : 317 - 326
  • [15] EFFECT OF HYDROSTATIC-PRESSURE ON MOS FIELD-EFFECT TRANSISTORS
    WLODARSKI, W
    BULLETIN DE L ACADEMIE POLONAISE DES SCIENCES-SERIE DES SCIENCES TECHNIQUES, 1974, 22 (06): : 529 - 536
  • [16] NOISE MEASUREMENTS ON JUNCTION FIELD-EFFECT TRANSISTORS
    PALLOTTINO, GV
    ZIRIZZOTTI, AE
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1994, 65 (01): : 212 - 220
  • [17] THRESHOLD VOLTAGE INSTABILITY OF MOS FIELD-EFFECT TRANSISTORS
    SHANKAR, SR
    MISRA, RP
    RAND, HT
    MICROELECTRONICS AND RELIABILITY, 1978, 17 (02): : 305 - 308
  • [18] TeraHertz electronic noise in field-effect transistors
    Palermo, C.
    Marinchio, H.
    Shiktorov, P.
    Starikov, E.
    Gruzinskis, V.
    Mahi, A.
    Varani, L.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2015, 14 (01) : 87 - 93
  • [20] LOW FREQUENCY NOISE IN MOS FIELD EFFECT TRANSISTORS
    FLINN, I
    BEW, G
    BERZ, F
    SOLID-STATE ELECTRONICS, 1967, 10 (08) : 833 - &